Graphene film coated ultra-flat thermal SiO2 grids

Graphene on Ultra-Flat Thermal SiO2 Substrate.These grids are created by coating our existing grids with graphene. Through a unique drop method, a graphene solution is dispersed onto the carbon grid with specific layers.  CharacteristicsFour thicknesses of CVD grapheneAvailable in either 1, 2, 3-5 or 6-8 layersTEM SubstrateThe Ultra-flat Thermal SiO2 Substrate consists of a 200nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675um. The size is 5 x 5mm.Graphene coverage of the TEM grid is better than 75%SpecificationsTypeThickness ofthe GrapheneTransparencyTEM Grid/AFM Substrate

Graphene on Ultra-Flat Thermal SiO₂ Substrate.

These grids are created by coating our existing grids with graphene. Through a unique drop method, a graphene solution is dispersed onto the carbon grid with specific layers.  

Characteristics

1. Four thicknesses of CVD graphene
   • Available in either 1, 2, 3-5 or 6-8 layers
2. TEM Substrate
   • The Ultra-flat Thermal SiO₂ Substrate consists of a 200nm thermally grown SiO₂ film on an ultra-flat silicon wafer with a normal thickness of 675um. The size is 5 x 5mm.
3. Graphene coverage of the TEM grid is better than 75%

Specifications

Type	Thickness of the Graphene	Transparency	TEM Grid/AFM Substrate	Support Film
1 Layer	~0.35 nm	~96.4%	N/A	Ultra-Flat Silicon
2 Layers	~0.7 nm	~92.7%	N/A	Ultra-Flat Silicon
3-5 Layers	1.0-1.7 nm	~85.8-90.4%	N/A	Ultra-Flat Silicon
6-8 Layers	2.1-2.8 nm	~78.5-83.2%	N/A	Ultra-Flat Silicon

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